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The exciton binding energy (E_b) is a key parameter that governs the physics of many optoelectronic devices. At their best, trustworthy and precise measurements ofE_bchallenge theoreticians to refine models, are a driving force in advancing the understanding of a material system, and lead to efficient device design. At their worst, inaccurateE_bmeasurements lead theoreticians astray, sow confusion within the research community, and hinder device improvements by leading to poor designs. This review article seeks to highlight the pros and cons of different measurement techniques used to determineE_b, namely, temperature‐dependent photoluminescence, resolving Rydberg states, electroabsorption, magnetoabsorption, scanning tunneling spectroscopy, and fitting the optical absorption. Due to numerous conflictingE_bvalues reported for halide perovskites (HP) and transition metal dichalcogenides (TMDC) monolayers, an emphasis is placed on highlighting these measurements in an attempt to reconcile the variance between different measurement techniques. It is argued that the experiments with the clearest indicators are in agreement on the following values: ≈350–450 meV for TMDC monolayers between SiO₂and vacuum, ≈150–200 meV for hBN‐encapsulated TMDC monolayers, ≈200–300 meV for common lead‐iodide 2D HPs, and ≈10 meV for methylammonium lead iodide.

Self‐doping is a particular doping method that has been applied to a wide range of organic semiconductors. However, there is a lack of understanding regarding the relationship between dopant structure and function. A structurally diverse series of self‐n‐doped perylene diimides (PDIs) is investigated to study the impact of steric encumbrance, counterion selection, and dopant/PDI tether distance on functional parameters such as doping, stability, morphology, and charge‐carrier mobility. The studies show that self‐n‐doping is best enabled by the use of sterically encumbered ammoniums with short tethers and Lewis basic counterions. Additionally, water is found to inhibit doping, which concludes that thermal degradation is merely a phenomenological feature of certain dopants, and that residual solvent evaporation is the primary driver of thermally activated doping. In situ grazing‐incidence wide‐angle X‐ray scattering studies show that sample annealing increases the π–π stacking distance and shrinks grain boundaries for improved long‐range ordering. These features are then correlated to contactless carrier‐mobility measurements with time‐resolved microwave conductivity before and after thermal annealing. The collective relationships between structural features and functionality are finally used to establish explicit self‐n‐dopant design principles for the future design of materials with improved functionality.

Aside from band gap reduction, little is understood about the effect of the tin‐for‐lead substitution on the fundamental optical and optoelectronic properties of metal halide perovskites (MHPs), especially when transitioning from 3D to lower dimensional structures. Herein, we take advantage of the spectroscopic isolation of excitons in 2D MHPs to study the intrinsic differences between lead and tin MHPs. The exciton's spectral fine structure indicates a larger polaron binding energy in tin MHPs. Additionally, the electroabsorption responses of the 2D MHPs demonstrates that tin MHPs have exciton binding energies 1.5–2× lower than that of their lead counterparts. Despite the lower binding energy, the excitons in tin MHPs are more Frenkel‐like with small radii, small polarizabilities, and large dipole moments. These results are interpreted as consequences of small polaron formation and disorder‐induced dipole moments. This work highlights the wide range of intrinsic differences between lead and tin MHPs as well as the complexity of excited states in these systems.